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Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/1048
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dc.contributor.authorRaju, A R-
dc.contributor.authorSardar, Kripasindhu-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-11-22T09:43:30Z-
dc.date.available2012-11-22T09:43:30Z-
dc.date.issued2002-12-
dc.identifier1369-8001en_US
dc.identifier.citationMaterials Science in Semiconductor Processing 4(6), 549-553 (2002)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/1048-
dc.descriptionRestricted Accessen_US
dc.description.abstractThin films of GaN, InGaN, AlGaN and AlN on Si(1 0 0) as well as on Al2O3(0 0 0 1) single crystalline substrates have been deposited at 1123, 1023, 1173 and 1173 K, respectively, by employing the simple inexpensive technique of nebulized spray pyrolysis. GaN films deposited on Si are polycrystalline where as the films deposited on Al2O3 are epitaxial. GaN epitaxial films show cathodoluminescence characteristics. Photoluminescence studies show that all the films are of high quality.en_US
dc.description.urihttp://dx.doi.org/ 10.1016/S1369-8001(02)00015-Xen_US
dc.language.isoenen_US
dc.publisherElsevier Science Ltden_US
dc.rights© 2002 Elsevier Science Ltden_US
dc.subjectThin filmsen_US
dc.subjectGaNen_US
dc.subjectInGaNen_US
dc.subjectAlGaNen_US
dc.subjectAlNen_US
dc.subjectnebulized spray pyrolysisen_US
dc.subjectcathodoluminescence characteristicsen_US
dc.titlePreparation and characterization of oriented III-V nitride thin films by nebulized spray pyrolysisen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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