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Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/1057
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dc.contributor.authorSardar, K-
dc.contributor.authorRaju, A R-
dc.contributor.authorBansal, B-
dc.contributor.authorVenkataraman, V-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-11-23T10:09:38Z-
dc.date.available2012-11-23T10:09:38Z-
dc.date.issued2003-
dc.identifier0038-1098en_US
dc.identifier.citationSolid State Communications 125(1), 55-57 (2003)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/1057-
dc.descriptionRestricted Accessen_US
dc.description.abstractGaMnN films with 1–3% Mn deposited on Si(100) and Al2O3(0001) substrates, by the technique of nebulized spray pyrolysis by employing acetylacetonate precursors, have been characterized by X-ray diffraction, photoluminescence spectra and other techniques. The films are ferromagnetic and show magnetic hysteresis. The ferromagnetic Tc increases with the Mn content, with the 3% Mn film showing a Tc of ∼250 K. Anomalous Hall effect is observed below Tc where the films exhibit a small negative magnetoresistance.en_US
dc.description.urihttp://dx.doi.org/ 10.1016/S0038-1098(02)00621-Xen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.rights© 2003 Elsevier Science Ltden_US
dc.subjectthin filmsen_US
dc.subjectmagnetic films and multilayersen_US
dc.subjectsemiconductorsen_US
dc.subjectelectronic transporten_US
dc.subjectluminescenceen_US
dc.subjectFerromagnetismen_US
dc.subjectSemiconductoren_US
dc.subjectGanen_US
dc.titleMagnetic, optical and transport properties of GaMnN filmsen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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