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dc.contributor.authorRaina, G-
dc.contributor.authorKulkarni, G U-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-11-23T10:46:12Z-
dc.date.available2012-11-23T10:46:12Z-
dc.date.issued2004-07-02-
dc.identifier0025-5408en_US
dc.identifier.citationMaterials Research Bulletin 39(9), 1271-1277 (2004)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/1060-
dc.descriptionRestricted Accessen_US
dc.description.abstractNitrides such as Si3N4 and GaN are made by the reaction of the respective oxide with N2 or NH3. In order to understand the mechanism of formation of nitrides, reactive laser ablation of B2O3, Al2O3, Ga2O3, and SiO2 in pure form, as well as in mixture with carbon, has been carried out in an atmosphere of nitrogen or ammonia in a pulsed supersonic jet. The reaction of N2 with SiO2 gives nitridic species such as Si2Ny (y≤5) in the vapor phase. On reaction with N2 in the presence of carbon, B2O3 and Ga2O3 yield species of the type BxNy and GaNy, respectively. Nitridic species are preponderant in the reaction with ammonia only in the case of SiO2. Al2O3 predominantly gives oxynitridic species under the reaction conditions examined.en_US
dc.description.urihttp://dx.doi.org/10.1016/j.materresbull.2004.04.009en_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.rights© 2004 Elsevier Ltden_US
dc.subjectelectronic materialsen_US
dc.subjectnitridesen_US
dc.subjectoxidesen_US
dc.subjectlaser annealingen_US
dc.subjectInfrared-Spectraen_US
dc.subjectCarbon Nanotubeen_US
dc.subjectNitrogen-Atomsen_US
dc.subjectNanowiresen_US
dc.subjectBoronen_US
dc.subjectDepositionen_US
dc.subjectClustersen_US
dc.subjectNanorodsen_US
dc.subjectAmmoniaen_US
dc.subjectVaporen_US
dc.titleFormation of B, Al, Ga, and Si nitrides from their oxides: a reactive laser ablation studyen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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