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DC Field | Value | Language |
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dc.contributor.author | Mangalam, R V K | - |
dc.contributor.author | Ranjith, R | - |
dc.contributor.author | Iyo, A | - |
dc.contributor.author | Sundaresan, A | - |
dc.contributor.author | Krupanidhi, S B | - |
dc.contributor.author | Rao, C N R | - |
dc.date.accessioned | 2012-11-30T10:56:34Z | - |
dc.date.available | 2012-11-30T10:56:34Z | - |
dc.date.issued | 2006-10 | - |
dc.identifier | 0038-1098 | en_US |
dc.identifier.citation | Solid State Communications 140(1), 42-44 (2006) | en_US |
dc.identifier.uri | https://libjncir.jncasr.ac.in/xmlui/10572/1132 | - |
dc.description | Restricted Access | en_US |
dc.description.abstract | We report on the dielectric properties of bismuth aluminate and gallate with Bi:Al(Ga) ratio of 1:1 and 12:1 prepared at high temperature and ambient pressure. These compounds crystallize in a noncentrosymmetric body-centered cubic structure (space group I23) with a ∼10.18 Å rather than in the perovskite structure. This cubic phase is related to the γ -Bi2O3 structure which has the actual chemical formula Bi3+24 (Bi3+ Bi5+)O40− δ. In the aluminates and gallates studied by us, the Al and Ga ions are distributed over the 24 f and 2a sites. These compounds exhibit ferroelectric hysteresis at room temperature with a weak polarization. c 2006 Elsevier Ltd. All rights reserved. | en_US |
dc.description.uri | http://dx.doi.org/10.1016/j.ssc.2006.07.015 | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Ltd | en_US |
dc.rights | © 2006 Elsevier Ltd | en_US |
dc.subject | Ferroelectrics | en_US |
dc.subject | X-ray scattering | en_US |
dc.subject | Dielectric response | en_US |
dc.title | Ferroelectricity in Bi26-xMxO40-δ (M = Al and Ga) with the γ-Bi2O3 structure | en_US |
dc.type | Article | en_US |
Appears in Collections: | Research Papers (Prof. C.N.R. Rao) |
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2006.5.pdf Restricted Access | 458.65 kB | Adobe PDF | View/Open Request a copy |
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