Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/1132
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dc.contributor.authorMangalam, R V K-
dc.contributor.authorRanjith, R-
dc.contributor.authorIyo, A-
dc.contributor.authorSundaresan, A-
dc.contributor.authorKrupanidhi, S B-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-11-30T10:56:34Z-
dc.date.available2012-11-30T10:56:34Z-
dc.date.issued2006-10-
dc.identifier0038-1098en_US
dc.identifier.citationSolid State Communications 140(1), 42-44 (2006)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/1132-
dc.descriptionRestricted Accessen_US
dc.description.abstractWe report on the dielectric properties of bismuth aluminate and gallate with Bi:Al(Ga) ratio of 1:1 and 12:1 prepared at high temperature and ambient pressure. These compounds crystallize in a noncentrosymmetric body-centered cubic structure (space group I23) with a ∼10.18 Å rather than in the perovskite structure. This cubic phase is related to the γ -Bi2O3 structure which has the actual chemical formula Bi3+24 (Bi3+ Bi5+)O40− δ. In the aluminates and gallates studied by us, the Al and Ga ions are distributed over the 24 f and 2a sites. These compounds exhibit ferroelectric hysteresis at room temperature with a weak polarization. c 2006 Elsevier Ltd. All rights reserved.en_US
dc.description.urihttp://dx.doi.org/10.1016/j.ssc.2006.07.015en_US
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.rights© 2006 Elsevier Ltden_US
dc.subjectFerroelectricsen_US
dc.subjectX-ray scatteringen_US
dc.subjectDielectric responseen_US
dc.titleFerroelectricity in Bi26-xMxO40-δ (M = Al and Ga) with the γ-Bi2O3 structureen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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