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dc.contributor.authorSreedhar, K-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-12-07T06:34:21Z-
dc.date.available2012-12-07T06:34:21Z-
dc.date.issued1990-10-
dc.identifier0025-5408en_US
dc.identifier.citationMaterials Research Bulletin 25(10), 1235-1242 (1990)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/1254-
dc.descriptionRestricted Accessen_US
dc.description.abstractLa2−xSrxNiO4 shows a maximum in the c/a ratio around x=0.6 up to which composition the concentration of holes is equal to that expected theoretically. The material becomes a degenerate semiconductor above a certain temperature up to x=0.8, but is metallic at room temperature when x≥1.0. All the compositions with x≥0.05 are paramagnetic in the 15-300K range. Based on these measurements, an electronic phase diagram is tentatively proposed. It is noteworthy that the antiferromagnetic order disappears at low doping levels in both La2−xSrxNiO4 and La2−xSrxNiO4, but metallicity is seen at 300K only at a much higher x value in the former system.en_US
dc.description.urihttp://dx.doi.org/10.1016/0025-5408(90)90079-Hen_US
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.rights© 1990 Pergamon Press Plcen_US
dc.subjectLanthanumen_US
dc.subjectStrontiumen_US
dc.subjectNickelen_US
dc.subjectOxidesen_US
dc.titleElectrical and magnetic properties of La2−xSrxNiO4: A tentative phase diagramen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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