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dc.contributor.authorRao, G R-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-12-07T06:49:44Z-
dc.date.available2012-12-07T06:49:44Z-
dc.date.issued1990-08-
dc.identifier0169-4332en_US
dc.identifier.citationApplied Surface Science 45(1), 65-69 (1990)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/1260-
dc.descriptionRestricted Accessen_US
dc.description.abstractN2 chemisorbs on (100), (110) and (111) single-crystal faces at 80 K without any dissociation. A molecular precursor species at the threshold of dissociation is formed at 80 K on a Ni(110) surface covered with atomic carbon or nitrogen; the precursor species dissociates at higher temperatures. At low C concentrations, however, dissociative adsorption occurs on Ni(110) at 80 K without forming any precursor species, accompanied by molecular chemisorption on the open Ni sites.en_US
dc.description.urihttp://dx.doi.org/10.1016/0169-4332(90)90021-Qen_US
dc.language.isoenen_US
dc.publisherElsevier Science BVen_US
dc.rights© 1990 Elsevier Science Publishers BVen_US
dc.subjectnitrogenen_US
dc.subjectsingle-crystal Ni surfacesen_US
dc.subjectdissociationen_US
dc.subjectmolecular chemisorptionen_US
dc.titleAdsorption of nitrogen on clean and modified single-crystal Ni surfacesen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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