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https://libjncir.jncasr.ac.in/xmlui/handle/10572/1894
Title: | Modulation of Electronic and Self-Assembly Properties of a Donor-Acceptor-Donor-Based Molecular Materials via Atomistic Approach |
Authors: | Dhar, Joydeep Swathi, K. Karothu, Durga Prasad Narayan, K. S. Patil, Satish |
Keywords: | Nanoscience & Nanotechnology Materials Science selenium electronic property self-assembly microstructure conductivity Field-Effect Transistors Heterojunction Solar-Cells Conjugated Polymers High-Performance Charge-Transport High Hole Selenophene Ambipolar Copolymer Semiconductors |
Issue Date: | 2015 |
Publisher: | American Chemical Society |
Citation: | ACS Applied Materials & Interfaces 7 1 Dhar, J.; Swathi, K.; Karothu, D. P.; Narayan, K. S.; Patil, S., Modulation of Electronic and Self-Assembly Properties of a Donor-Acceptor-Donor-Based Molecular Materials via Atomistic Approach. ACS Applied Materials & Interfaces 2015, 7 (1), 670-681. |
Abstract: | The performance of molecular materials in optoelectronic devices critically depends upon their electronic properties and solid-state structure. In this report, we have synthesized sulfur and selenium based (T4BT and T4BSe) donor-acceptor-donor (D-A-D) organic derivatives in order to understand the structure-property correlation in organic semiconductors by selectively tuning the chalcogen atom. The photophysical properties exhibit a significant alteration upon varying a single atom in the molecular structure. A joint theoretical and experimental investigation suggests that replacing sulfur with selenium significantly reduces the band gap and molar absorption coefficient because of lower electronegativity and ionization potential of selenium. Single-crystal X-ray diffraction analysis showed differences in their solid-state packing and intermolecular interactions. Subsequently, difference in the solid-state packing results variation in self-assembly. Micorstructural changes within these materials are correlated to their electrical resistance variation, investigated by conducting probe atomic force microscopy (CP-AFM) measurements. These results provide useful guidelines to understand the fundamental properties of D-A-D materials prepared by atomistic modulation. |
Description: | Restricted access |
URI: | https://libjncir.jncasr.ac.in/xmlui/10572/1894 |
ISSN: | 1944-8244 |
Appears in Collections: | Research Articles (Narayan K. S.) |
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