Self-Assembled Nanodielectrics for High-Speed, Low-Voltage Solution-Processed Polymer Logic Circuits

Abstract

Solution-processed polymer-based logic circuits are typically associated with high operating voltage and slow switching speeds. Here, polymer field-effect transistors (PFETs) fabricated on hybrid self-assembled nanodielectric (SAND) structures are reported, the latter consisting of alternating organic-inorganic layers exhibiting low leakage current (approximate to 10(-9) A cm(-2)) and high capacitance (approximate to 0.8 mu F cm(-2)). Suitable device engineering, controllable dielectric parameters, and interface energetics enable PFET operation at +/- 1 V, field-effect mobility (mu(FET)) > 2.0 cm(2) V-1 s(-1), subthreshold swing approximate to 100 mV dec(-1), and switching response approximate to 150 ns. These performance parameters are orders of magnitude higher than similar devices fabricated from other polymer dielectrics. Inverter and NAND logic circuits fabricated from these SAND-based PFETs possess voltage gain up to 38 and maximum-frequency bandwidth of 2 MHz. A systematic study comparing different classes of dielectric and semiconducting material attributes the enhanced performance to improved relaxation dynamics of the SAND layer and tunable chemically functionalized interfaces.