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Title: Pre-nitridation induced In incorporation in InxGa1-xN nanorods on Si(111) grown by molecular beam epitaxy
Authors: De, Arpan
Tangi, Malleswararao
Shivaprasad, S. M.
Keywords: Applied Physics
Movpe Growth
Ingan Nanowires
Issue Date: 2015
Publisher: American Institute of Physics
Citation: Journal of Applied Physics
De, A.; Tangi, M.; Shivaprasad, S. M., Pre-nitridation induced In incorporation in InxGa1-xN nanorods on Si(111) grown by molecular beam epitaxy. Journal of Applied Physics 2015, 118 (2), 6.
Abstract: We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical properties of InxGa1-xN films grown by plasma assisted molecular beam epitaxy, has been studied. The nitrogen rich growth environment and surface nitridation results in the formation of vertically well-aligned single crystalline nanorods that are coalesced and isolated at 400 degrees C and 500 degrees C, respectively. In incorporation is also seen to be enhanced to approximate to 28% at 400 degrees C to yield a stable green emission, while the nanorods grown at 500 degrees C show blue band-edge emission. The orientation, phase separations, and optical properties characterized by Reflection High Energy Electron Diffraction, Field Emission Scanning Electron Microscopy, high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and photoluminescence are corroborated to understand the underlying mechanism. The study optimizes conditions to grow high quality catalyst-free well-aligned InGaN rods on nitrided Si surface, whose band-edge emission can be tuned from blue to green by sheer control of the substrate temperature. (c) 2015 AIP Publishing LLC.
Description: Restricted access
ISSN: 0021-8979
Appears in Collections:Research Articles (Shivaprasad, S. M.)

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