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Title: Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2
Authors: Rajaji, V.
Malavi, Pallavi S.
Yamijala, Sharma S. R. K. C.
Sorb, Y. A.
Dutta, Utpal
Guin, Satya N.
Joseph, B.
Pati, Swapan Kumar
Karmakar, S.
Biswas, Kanishka
Narayana, Chandrabhas
Keywords: Physics
Thermoelectric Properties
Issue Date: 2016
Publisher: American Institute Physics
Citation: Rajaji, V.; Malavi, P. S.; Yamijala, Ssrkc; Sorb, Y. A.; Dutta, U.; Guin, S. N.; Joseph, B.; Pati, S. K.; Karmakar, S.; Biswas, K.; Narayana, C., Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2. Applied Physics Letters 2016, 109 (17), 5
Applied Physics Letters
Abstract: We report the effect of strong spin orbit coupling inducing electronic topological and semiconductor to metal transitions on the thermoelectric material AgBiSe2 at high pressures. The synchrotron X-ray diffraction and the Raman scattering measurement provide evidence for a pressure induced structural transition from hexagonal (alpha-AgBiSe2) to rhombohedral (beta-AgBiSe2) at a relatively very low pressure of around 0.7 GPa. The sudden drop in the electrical resistivity and clear anomalous changes in the Raman line width of the A(1g) and E-g((1)) modes around 2.8 GPa was observed suggesting a pressure induced electronic topological transition. On further increasing the pressure, anomalous pressure dependence of phonon (A(1g) and E-g((1))) frequencies and line widths along with the observed temperature dependent electrical resistivity show a pressure induced semiconductor to metal transition above 7.0 GPa in beta-AgBiSe2. First principles theoretical calculations reveal that the metallic character of beta-AgBiSe2 is induced mainly due to redistributions of the density of states (p orbitals of Bi and Se) near to the Fermi level. Based on its pressure induced multiple electronic transitions, we propose that AgBiSe2 is a potential candidate for the good thermoelectric performance and pressure switches at high pressure. Published by AIP Publishing.
Description: Restricted Access
ISSN: 0003-6951
Appears in Collections:Research Articles (Chandrabhas N.)
Research Articles (Swapan Kumar Pati)
Research Papers (Kaniska Biswas)

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