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Title: | Zn2NF and Related Analogues of ZnO |
Authors: | Lingampalli, Srinivasa Rao Manjunath, Krishnappa Shenoy, Sandhya Waghmare, Umesh V. Rao, C. N. R. |
Keywords: | Chemistry Photocatalytic Hydrogen Generation Electronic-Structure Visible-Light Nitride-Fluorides Crystal-Structure Solar-Cells Doped Zno Nanostructures Substitution Nitrogen |
Issue Date: | 2016 |
Publisher: | American Chemical Society |
Citation: | Lingampalli, S. R.; Manjunath, K.; Shenoy, S.; Waghmare, U. V.; Rao, C. N. R., Zn2NF and Related Analogues of ZnO. Journal of the American Chemical Society 2016, 138 (26), 8228-8234 http://dx.doi.org/10.1021/jacs.6b04198 Journal of the American Chemical Society 138 26 |
Abstract: | Substitution of aliovalent N3- and F- anions in place of O2- in ZnO brings about major changes in the electronic structure and properties, the composition, even with 10 atomic percent or less of the two anions, rendering the material yellow colored with a much smaller band gap. We have examined the variation of band gap of ZnO with progressive substitution of N and F and more importantly prepared Zn2NF which is the composition one obtains ultimately upon complete replacement of O2- ions. In this article, we present the results of a first complete study of the crystal and electronic structures as well as of properties of a stable metal nitride fluoride, Zn2NF. This material occurs in two crystal forms, tetragonal and orthorhombic, both with a band gap much smaller than that of ZnO. Electronic structures of Zn2NF as well as ZnO0.2N0.5F0.3 investigated by first-principles calculations show that the valence bands of these are dominated by the N (2p) states lying at the top. Interestingly, the latter is a p-type material, a property that has been anticipated for long time. The calculations predict conduction and valence band edges in Zn2NF to be favorable for water splitting. Zn2NF does indeed exhibit good visible-light-induced hydrogen evolution activity unlike ZnO. The present study demonstrates how aliovalent anion substitution can be employed for tuning band gaps of materials. |
Description: | Restricted Access |
URI: | https://libjncir.jncasr.ac.in/xmlui/10572/2100 |
ISSN: | 0002-7863 |
Appears in Collections: | Research Articles (Umesh V. Waghmare) Research Papers (Prof. C.N.R. Rao) |
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