Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/2101
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dc.contributor.authorShenoy, U. Sandhya
dc.contributor.authorGupta, Uttam
dc.contributor.authorNarang, Deepa S.
dc.contributor.authorLate, Dattatray J.
dc.contributor.authorWaghmare, Umesh V.
dc.contributor.authorRao, C. N. R.
dc.date.accessioned2017-01-24T06:21:48Z-
dc.date.available2017-01-24T06:21:48Z-
dc.date.issued2016
dc.identifier.citationShenoy, U. S.; Gupta, U.; Narang, D. S.; Late, D. J.; Waghmare, U. V.; Rao, C. N. R., Electronic structure and properties of layered gallium telluride. Chemical Physics Letters 2016, 651, 148-154 http://dx.doi.org/10.1016/j.cplett.2016.03.045en_US
dc.identifier.citationChemical Physics Lettersen_US
dc.identifier.citation651en_US
dc.identifier.issn0009-2614
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/2101-
dc.descriptionRestricted Accessen_US
dc.description.abstractLayer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X=S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.description.uri1873-4448en_US
dc.description.urihttp://dx.doi.org/10.1016/j.cplett.2016.03.045en_US
dc.language.isoEnglishen_US
dc.publisherElsevier Science Bven_US
dc.rights@Elsevier Science Bv, 2016en_US
dc.subjectChemistryen_US
dc.subjectPhysicsen_US
dc.subjectSingle-Crystallineen_US
dc.subjectOptical-Propertiesen_US
dc.subjectGraphene Analogsen_US
dc.subjectPhotodetectorsen_US
dc.subjectTransistorsen_US
dc.subjectNanosheetsen_US
dc.subjectGasen_US
dc.subjectSelenideen_US
dc.subjectGrowthen_US
dc.subjectEnergyen_US
dc.titleElectronic structure and properties of layered gallium tellurideen_US
dc.typeArticleen_US
Appears in Collections:Research Articles (Umesh V. Waghmare)
Research Papers (Prof. C.N.R. Rao)

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