Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/2284
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dc.contributor.authorShetty, Satish
dc.contributor.authorShivaprasad, S. M.
dc.date.accessioned2017-01-24T06:53:01Z-
dc.date.available2017-01-24T06:53:01Z-
dc.date.issued2016
dc.identifier.citationShetty, S.; Shivaprasad, S. M., Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment. Journal of Applied Physics 2016, 119 (5), 6 http://dx.doi.org/10.1063/1.4941102en_US
dc.identifier.citationJournal of Applied Physicsen_US
dc.identifier.citation119en_US
dc.identifier.citation5en_US
dc.identifier.issn0021-8979
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/2284-
dc.descriptionRestricted Accessen_US
dc.description.abstractWe report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures-"8 x 8" and "8/3 x 8/3"-form, and further nitridation leads to 1 x 1 stoichiometric silicon nitride. The interface is seen to have the Si1+ and Si3+ states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses. The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending. (C) 2016 AIP Publishing LLC.en_US
dc.description.uri1089-7550en_US
dc.description.urihttp://dx.doi.org/10.1063/1.4941102en_US
dc.language.isoEnglishen_US
dc.publisherAmerican Institute Physicsen_US
dc.rights@American Institute Physics, 2016en_US
dc.subjectPhysicsen_US
dc.subjectChemical-Vapor-Depositionen_US
dc.subjectMultiple-Quantum Wellsen_US
dc.subjectSi(111) Surfaceen_US
dc.subjectGanen_US
dc.subjectNitrogenen_US
dc.subjectSiliconen_US
dc.subjectSubstrateen_US
dc.subjectGrowthen_US
dc.titleEarly stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignmenten_US
dc.typeArticleen_US
Appears in Collections:Research Articles (Shivaprasad, S. M.)

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