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Title: Epitaxy, phase separation and band-edge emission of spontaneously formed InGaN nanorods
Authors: De, Arpan
Shivaprasad, S. M.
Keywords: Physics
band-edge emission
phase separation
Molecular-Beam Epitaxy
Multiple-Quantum Wells
Lateral Overgrowth
In1-Xgaxn Alloys
Issue Date: 2016
Publisher: IoP Publishing Ltd
Citation: De, A.; Shivaprasad, S. M., Epitaxy, phase separation and band-edge emission of spontaneously formed InGaN nanorods. Journal of Physics D-Applied Physics 2016, 49 (35), 8
Journal of Physics D-Applied Physics
Abstract: An In-flux dependent study of the nature of epitaxy, compositional phase separation and band-edge emission of spontaneously formed c-oriented InGaN nanorods on c-sapphire is performed. At higher In flux-rates, m-faceted thick nanorods (approximate to 700 nm) form with two in-plane epitaxial orientations, and display compositional phases with In composition varying from 14 to 63%. In these rods, photo-luminescent (PL) emission is seen to originate only from the localized high-In phase (63%) that is embedded in the low-In (14%) InGaN matrix. As the In flux-rate is reduced, nanorods of smaller diameter (approximate to 60 nm) and a coalesced nanorod network are formed, with In incorporation of 15% and 9%, respectively. These faceted, c-aligned thinner nanorods are of a single compositional phase and epitaxy and display room-temperature PL emission. Optical absorption and emission properties of these nanostructures follow Vegard's law of band-gaps, and the observed bowing parameter and Stokes shifts correlate to the observed compositional inhomogeneity and carrier localization.
Description: Restricted Access
ISSN: 0022-3727
Appears in Collections:Research Articles (Shivaprasad, S. M.)

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