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DC Field | Value | Language |
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dc.contributor.author | Biswas, Kanishka | - |
dc.contributor.author | Sardar, Kripasindhu | - |
dc.contributor.author | Rao, C N R | - |
dc.date.accessioned | 2012-01-23T06:25:54Z | - |
dc.date.available | 2012-01-23T06:25:54Z | - |
dc.date.issued | 2006-08-25 | - |
dc.identifier | 0003-6951 | en_US |
dc.identifier.citation | Applied Physics Letters 89(13), 132503 (2006) | en_US |
dc.identifier.uri | https://libjncir.jncasr.ac.in/xmlui/10572/233 | - |
dc.description.abstract | 3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350 degrees C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (T-C) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials. (c) 2006 American Institute of Physics. | en_US |
dc.description.uri | http://dx.doi.org/10.1063/1.2357927 | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | © 2006 American Institute of Physics | en_US |
dc.subject | Molecular-Beam-Epitaxy | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | (Ga,Mn)N | en_US |
dc.subject | Origin | en_US |
dc.subject | Films | en_US |
dc.title | Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures | en_US |
dc.type | Article | en_US |
Appears in Collections: | Research Papers (Prof. C.N.R. Rao) |
Files in This Item:
File | Description | Size | Format | |
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Sl. No. 26 2006 Applied Physic Letters 89 !13) 132503 -.pdf | 279.34 kB | Adobe PDF | View/Open |
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