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dc.contributor.authorBiswas, Kanishka-
dc.contributor.authorSardar, Kripasindhu-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-01-23T06:25:54Z-
dc.date.available2012-01-23T06:25:54Z-
dc.date.issued2006-08-25-
dc.identifier0003-6951en_US
dc.identifier.citationApplied Physics Letters 89(13), 132503 (2006)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/233-
dc.description.abstract3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350 degrees C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (T-C) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials. (c) 2006 American Institute of Physics.en_US
dc.description.urihttp://dx.doi.org/10.1063/1.2357927en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2006 American Institute of Physicsen_US
dc.subjectMolecular-Beam-Epitaxyen_US
dc.subjectSemiconductorsen_US
dc.subject(Ga,Mn)Nen_US
dc.subjectOriginen_US
dc.subjectFilmsen_US
dc.titleFerromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperaturesen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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