Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/2345
Full metadata record
DC FieldValueLanguage
dc.contributor.authorSreedhara, M. B.
dc.contributor.authorVasu, K.
dc.contributor.authorRao, C. N. R.
dc.date.accessioned2017-02-21T06:56:21Z-
dc.date.available2017-02-21T06:56:21Z-
dc.date.issued2014
dc.identifier.citationSreedhara, MB; Vasu, K; Rao, CNR, Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides. Zeitschrift Fur Anorganische Und Allgemeine Chemie 2014, 640 (14) 2737-2741, http://dx.doi.org/10.1002/zaac.201400386en_US
dc.identifier.citationZeitschrift Fur Anorganische Und Allgemeine Chemieen_US
dc.identifier.citation640en_US
dc.identifier.citation14en_US
dc.identifier.issn0044-2313
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/2345-
dc.descriptionRestricted Accessen_US
dc.description.abstractBy making use of the fact that single- and few-layer nanosheets of GaS and GaSe are readily obtained by micromechanical cleavage because of their mica-like morphology, we were able to prepare GaN nanosheets by the reaction of these chalcogenide nanosheets with ammonia at 600-650 degrees C. The nitride nanosheets were characterized by transmission electron microscopy, atomic force microscopy, and other methods. Few-layer VN was obtained by high-temperature ammonolysis of exfoliated V2O5 sheets. Ammonolysis of MoO3 and MoS2 nanosheets yields the nitride nanosheets.en_US
dc.description.uri1521-3749en_US
dc.description.urihttp://dx.doi.org/10.1002/zaac.201400386en_US
dc.language.isoEnglishen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.rights@Wiley-V C H Verlag Gmbh, 2014en_US
dc.subjectInorganic & Nuclear Chemistryen_US
dc.subjectLayered Compoundsen_US
dc.subjectNanosheetsen_US
dc.subjectNitridationen_US
dc.subjectMetal Nitridesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectGalliumen_US
dc.subjectChemical-Vapor-Depositionen_US
dc.subjectMolybdenum Nitridesen_US
dc.subjectQuality Ganen_US
dc.subjectThin-Filmsen_US
dc.subjectDelta-Monen_US
dc.subjectGrapheneen_US
dc.subjectNanocrystalsen_US
dc.subjectTransistorsen_US
dc.subjectEpitaxyen_US
dc.subjectRoutesen_US
dc.titleSynthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitridesen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

Files in This Item:
File Description SizeFormat 
250.pdf
  Restricted Access
815.68 kBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.