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Title: Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a 1T Monolayer of MoS2
Authors: Shirodkar, Sharmila N.
Waghmare, Umesh V.
Keywords: Physics
Issue Date: 2014
Publisher: American Physical Society
Citation: Shirodkar, SN; Waghmare, UV, Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a 1T Monolayer of MoS2. Physical Review Letters 2014, 112 (15), 157601
Physical Review Letters
Abstract: Using a combination of Landau theoretical analysis and first-principles calculations, we establish a spontaneous symmetry breaking of the metallic state of the 1T monolayer of MoS2 that opens up a band gap and leads to an unexpected yet robust ferroelectricity with ordering of electric dipoles perpendicular to its plane. Central to the properties of this thinnest known ferroelectric is a strong coupling of conducting states with valley phonons that induce an effective electric field. The current in a semiconducting 1T-MoS2 channel can, thus, be controlled independently by changing its ferroelectric dipolar structure with a gate field, opening up a possibility of a class of nanoscale dipolectronic devices. Our analysis applies equally well to MoSe2, WS2, and WSe2, giving tunability in design of such devices based on two-dimensional chalcogenides.
Description: Restricted Access
ISSN: 0031-9007
Appears in Collections:Research Articles (Umesh V. Waghmare)

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