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Title: Ion induced compositional changes and nanodroplet formation on GaN surface
Authors: Venugopal, Vinay
Upadhyaya, Kishor
Kumar, Kishore
Shivaprasad, S. M.
Keywords: Physical Chemistry
Materials Science, Coatings & Films
Applied Physics
Condensed Matter Physics
Gan Epilayer Surfaces
Low Energy Argon Ion Bombardment
Issue Date: 2014
Publisher: Elsevier Science Bv
Citation: Venugopal, V; Upadhyaya, K; Kumar, K; Shivaprasad, SM, Ion induced compositional changes and nanodroplet formation on GaN surface. Applied Surface Science 2014, 315, 440-444,
Applied Surface Science
Abstract: Low energy argon ion bombardment of different fluence onto a GaN film grown on Al2O3 (0 0 0 1) surface induces interesting compositional and morphological modifications. While atomic force microscopy (AFM) studies reveal the formation of a circular flat islands, Energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) core-level and valence-band spectra confirm that these nanodroplets consist of pure Ga. Detailed XPS studies suggest breaking of Ga-N bond, that releases Ga to diffuse on the surface and nucleate at the threading dislocation sites, defined by the interfacial surface free energy. The formation of droplet pattern formation is discussed in the light of the existing theories on ion induced surface modification. (C) 2014 Elsevier B.V. All rights reserved.
Description: Restricted Access
ISSN: 0169-4332
Appears in Collections:Research Articles (Shivaprasad, S. M.)

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