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dc.contributor.authorDe, Arpan
dc.contributor.authorNagaraja, K. K.
dc.contributor.authorTangi, Malleswararao
dc.contributor.authorShivaprasad, S. M.
dc.identifier.citationDe, A; Nagaraja, KK; Tangi, M; Shivaprasad, SM, Spontaneous growth of InxGa1-xN nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy. Materials Research Express 2014, 1 (3), 35019
dc.identifier.citationMaterials Research Expressen_US
dc.descriptionRestricted Accessen_US
dc.description.abstractEffect of growth temperature on the morphology, structural and optical properties of InxGa1-xN layers grown under nitrogen-rich conditions, by plasma assisted molecular beam epitaxy, on c-plane Sapphire have been studied. By varying the substrate temperature we are able to obtain tapered as well as flat-top nanorod and interconnected random network morphology. An increase of indium incorporation, determined by HRXRD, from 1% to 23% with decrease in growth temperature has been obtained. Room temperature photoluminescence (PL) and absorption measurements on the grown samples follow Vegard's law. A band bowing parameter of 1.54 eV has been determined for the observed composition range. A good quality InxGa1-xN film having no phase separation with significant PL emission intensity is obtained at a growth temperature much lower than that conventionally used in MBE for InxGa1-xN growth on sapphire.en_US
dc.publisherIoP Publishing Ltden_US
dc.rights@IoP Publishing Ltd, 2014en_US
dc.subjectMaterials Scienceen_US
dc.titleSpontaneous growth of InxGa1-xN nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxyen_US
Appears in Collections:Research Articles (Shivaprasad, S. M.)

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