Study of MBE growth and characterization of gallium nitride films and nanostructures

Abstract

The group III-Nitride solid state devices, which have permeated our daily life, are light emitting diodes (LEDs) and laser diodes (LDs). In fact, they have been overshadowed only by the transistor. The power efficiency, ruggedness and compactness of these light emitting devices are unbeatable and have greatly contributed to their dissemination. LEDs are seen on electronic billboards at airports, subways and train stations indicating important information, and are extensively used as back-lighting and indicators in all electronic applications that requires a human interface. More recently, 3D displays based on LEDs are posing challenge to LCD displays and are overtaking other devices. Since the 1980s, LDs and LEDs led to the creation of a whole new branch of consumer electronics in the form of CD and DVD players/writers, laser printers and fibreoptics. The potential of High Brightness LEDs which can replace all Solid State Lighting, and the possibilities for forming full-spectrum Solar Cells, make these materials the most sought after by researchers and industries.