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DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Narayan, K.S. | - |
dc.contributor.author | Harsh, Rishav | - |
dc.date.accessioned | 2020-07-21T14:56:40Z | - |
dc.date.available | 2020-07-21T14:56:40Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Harsh, Rishav. 2015, Noise spectroscopy of polymer field effect transistors, MS thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru | en_US |
dc.identifier.uri | https://libjncir.jncasr.ac.in/xmlui/handle/10572/2981 | - |
dc.description | Open access | en_US |
dc.description.abstract | Practical demonstration of a working transistor by John Bardeen, Walter Brat- tain, and William Shockley in 1947 laid the foundation of electronics industry, and were awarded the Nobel prize in Physics (1956)1 for the same. The electronic cir- cuits that used vacuum tubes and triodes were supplanted by silicon based devices with the added advantage of reduced power consumption, smaller size, improved performance, large scale production, etc. Silicon based logic circuits nd critical application in the eld of computing, communications, space technology, manufac- turing industries, aviation, defence, research, consumer electronics and many more. At present, all forM.S. of technological advancements rely heavily on electronics. | en_US |
dc.language.iso | English | en_US |
dc.publisher | Jawaharlal Nehru Centre for Advanced Scientific Research | en_US |
dc.rights | © 2015 JNCASR | en_US |
dc.subject | Field effect transistor | en_US |
dc.title | Noise spectroscopy of polymer field effect transistors | en_US |
dc.type | Thesis | en_US |
dc.type.qualificationlevel | Master | en_US |
dc.type.qualificationname | MS | en_US |
dc.publisher.department | Chemistry and Physics of Materials Unit (CPMU) | en_US |
Appears in Collections: | Student Theses (CPMU) |
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