Epitaxial growth of InN and InxGa1-xN nanostructured films on structurally modified substrates using MBE

Abstract

In the Semiconductor Age in last 50 years, our views, our attitudes and our way of living have been modified by the research and technological advancements made in electronic materials. Tools and gadgets like personal computers, mobile phones and Light Emitting Diodes (LED) based lighting and display gadgets, are just some of the examples among the vast number of electronic devices we use in our day to day life. In this context, the nitride based LED and Laser Diode (LD) are clear examples: the blue LED was the result of a technological breakthrough in 1994 which led to a revolution in optoelectronics, for which the prestigious Nobel prize of 2014 was awarded to Shuji Nakamura, Hiroshi Amano and Isamu Akasaki.