Field emission properties of boron and nitrogen doped carbon nanotubes

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DC Field	Value	Language
dc.contributor.author	Sharma, R B	-
dc.contributor.author	Late, D J	-
dc.contributor.author	Joag, D S	-
dc.contributor.author	Govindaraj, A	-
dc.contributor.author	Rao, C N R	-
dc.date.accessioned	2012-02-08T06:31:03Z	-
dc.date.available	2012-02-08T06:31:03Z	-
dc.date.issued	2006-09-08	-
dc.identifier	0009-2614	en_US
dc.identifier.citation	Chemical Physics Letters 428(1-3), 102–108 (2006)	en_US
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/336	-
dc.description	Restricted Access	en_US
dc.description.abstract	Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of I mu A, the current density (J) was 4 A/cm(2) at 368 V/mu m for B-doped CNTs and at 320 V/mu m for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm(2) at 290 V/mu m for undoped CNTs. FE currents upto 400 mu A drawn from both B- and N-doped CNTs are stable for more than 3 h. (c) 2006 Elsevier B.V. All rights reserved.	en_US
dc.description.uri	http://dx.doi.org/10.1016/j.cplett.2006.06.089	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier Science BV	en_US
dc.rights	© 2006 Elsevier BV	en_US
dc.subject	Large-Scale Synthesis	en_US
dc.subject	Pyrolysis	en_US
dc.title	Field emission properties of boron and nitrogen doped carbon nanotubes	en_US
dc.type	Article	en_US
Appears in Collections:	Research Papers (Prof. C.N.R. Rao)

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