Negative differential resistance in GaN nanocrystals above room temperature

Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/408

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DC Field	Value	Language
dc.contributor.author	Chitara, Basant	-
dc.contributor.author	Jebakumar, D S Ivan	-
dc.contributor.author	Rao, C N R	-
dc.contributor.author	Krupanidhi, S B	-
dc.date.accessioned	2012-02-14T09:29:21Z	-
dc.date.available	2012-02-14T09:29:21Z	-
dc.date.issued	2009-10-07	-
dc.identifier	0957-4484	en_US
dc.identifier.citation	Nanotechnology 20(40), 405205-(1-4) (2009)	en_US
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/408	-
dc.description	Restricted Access	en_US
dc.description.abstract	Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is similar to 7 V above room temperature.	en_US
dc.description.uri	http://dx.doi.org/10.1088/0957-4484/20/40/405205	en_US
dc.language.iso	en	en_US
dc.publisher	IOP Publishing Ltd	en_US
dc.rights	© 2009 IOP Publishing Ltd	en_US
dc.subject	Monte-Carlo Calculation	en_US
dc.subject	Gallium Nitride	en_US
dc.subject	Band Structures	en_US
dc.subject	Diodes	en_US
dc.subject	Performance	en_US
dc.subject	Threshold	en_US
dc.subject	Route	en_US
dc.subject	Light	en_US
dc.subject	Laser	en_US
dc.title	Negative differential resistance in GaN nanocrystals above room temperature	en_US
dc.type	Article	en_US
Appears in Collections:	Research Papers (Prof. C.N.R. Rao)

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