New Solvothermal Routes for GaN Nanocrystals

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DC Field	Value	Language
dc.contributor.author	Sardar, K	-
dc.contributor.author	Rao, C N R	-
dc.date.accessioned	2012-02-15T10:42:57Z	-
dc.date.available	2012-02-15T10:42:57Z	-
dc.date.issued	2004-03-05	-
dc.identifier	0935-9648	en_US
dc.identifier.citation	Advanced Materials 16(5), 425-429 (2004)	en_US
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/437	-
dc.description	Restricted Access	en_US
dc.description.abstract	GaN nanocrystals (see Figure) of hexagonal structure and varying diameters have been prepared by the reaction of hexamethyldisilazane (HMDS) with gallium cupferron or GaCl3 under solvothermal conditions. The nanocrystals show a size-dependent photoluminescence band in the 260-320 nm region, characteristic of quantum confinement.	en_US
dc.description.uri	http://dx.doi.org/10.1002/adma.200306050	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH	en_US
dc.rights	© 2004 WILEY-VCH Verlag GmbH & Co	en_US
dc.subject	Gallium Nitride	en_US
dc.subject	Photoluminescence	en_US
dc.subject	Precursors	en_US
dc.title	New Solvothermal Routes for GaN Nanocrystals	en_US
dc.type	Article	en_US
Appears in Collections:	Research Papers (Prof. C.N.R. Rao)

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