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Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/490
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dc.contributor.authorPanchokarla, L S-
dc.contributor.authorSubrahmanyam, K S-
dc.contributor.authorSaha, S K-
dc.contributor.authorGovindaraj, Achutharao-
dc.contributor.authorKrishnamurthy, H R-
dc.contributor.authorWaghmare, U V-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-02-22T08:37:12Z-
dc.date.available2012-02-22T08:37:12Z-
dc.date.issued2009-12-11-
dc.identifier0935-9648en_US
dc.identifier.citationAdvanced Materials 21(46), 4726-4730 (2009)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/490-
dc.descriptionRestricted Accessen_US
dc.description.abstractBoron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed.en_US
dc.description.sponsorshipCSIR, New Delhi. JNCASR.en_US
dc.description.urihttp://dx.doi.org/10.1002/adma.200901285en_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.rights© 2009 Wiley-V C H Verlag Gmbh & Coen_US
dc.subjectCarbon Nanotubesen_US
dc.subjectApproximationen_US
dc.titleSynthesis, Structure, and Properties of Boron- and Nitrogen-Doped Grapheneen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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