GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls

Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/65

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DC Field	Value	Language
dc.contributor.author	Gautam, Ujjal K	-
dc.contributor.author	Vivekchand, S R C	-
dc.contributor.author	Govindaraj, A	-
dc.contributor.author	Rao, C N R	-
dc.date.accessioned	2011-03-18T09:01:02Z	-
dc.date.available	2011-03-18T09:01:02Z	-
dc.date.issued	2005	-
dc.identifier	1359-7345	en_US
dc.identifier.citation	Chemical Communications (31), 3995-3997 (2005)	en_US
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/65	-
dc.description	Restricted access	en_US
dc.description.abstract	Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity.	en_US
dc.description.uri	http://dx.doi.org/10.1039/b506676j	en_US
dc.language.iso	en	en_US
dc.publisher	The Royal Society of Chemistry	en_US
dc.rights	© 2005 The Royal Society of Chemistry	en_US
dc.subject	Carbon Nanowalls	en_US
dc.subject	Nanosheets	en_US
dc.subject	Nanostructures	en_US
dc.subject	Growth	en_US
dc.title	GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls	en_US
dc.type	Article	en_US
Appears in Collections:	Research Papers (Prof. C.N.R. Rao)

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