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Title: | Collapse of the charge ordering gap of Nd0.5Sr0.5MnO3 in an applied magnetic field |
Authors: | Biswas, Amlan Arulraj, Anthony Raychaudhuri, A K Rao, C N R |
Keywords: | Insulator-Metal Transition Giant Magnetoresistance Doped Lamno3 Manganites Dependence |
Issue Date: | 14-Feb-2000 |
Publisher: | IOP Publishing Ltd |
Citation: | Journal Of Physics: Condensed Matter 12(6), L101-L107 (2000) |
Abstract: | We report results of tunneling studies on the charge ordering compound Nd0.5Sr0.5MnO3 in a magnetic field up to 6 T and for temperature down to 25 K. We show that a gap (2 Delta(CO) approximate to 0.5 eV opens up in the density of state (DOS) at the Fermilevel (E-F) on charge ordering (T-CO = 150 K) which collapses in an applied magnetic field when the charge ordered state melts. There is a clear correspondence between the behaviour of the resistivity and the gap formation and its collapse in an applied magnetic field. We conclude that a gap in the DOS at E-F is necessary for the stability of the charge ordered state. |
Description: | Restricted Access |
URI: | https://libjncir.jncasr.ac.in/xmlui/10572/681 |
Other Identifiers: | 0953-8984 |
Appears in Collections: | Research Papers (Prof. C.N.R. Rao) |
Files in This Item:
File | Description | Size | Format | |
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sl.no54.2000 J. Phys. Condens. Matter 12 L101.pdf Restricted Access | 291.05 kB | Adobe PDF | View/Open Request a copy |
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