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dc.contributor.authorJoyce, B A-
dc.contributor.authorRaveau, B-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-11-07T11:41:53Z-
dc.date.available2012-11-07T11:41:53Z-
dc.date.issued1997-02-
dc.identifier1359-0286en_US
dc.identifier.citationCurrent Opinion in Solid State & Materials Science 2(1), 1-2 (1997)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/943-
dc.descriptionEditorial Material. Restricted Access.en_US
dc.description.urihttp://dx.doi.org/10.1016/S1359-0286(97)80097-6en_US
dc.language.isoenen_US
dc.publisherCurrent Science Ltden_US
dc.rights© 1997 Current Chemistryen_US
dc.subjectDRAM - dynamic random access memoryen_US
dc.subjectIC - integrated circuitsen_US
dc.subjectSQUIDS - superconducting quantum interference devicesen_US
dc.subjectTc - superconducting transition temperatureen_US
dc.titleElectronic materials - Editorial overviewen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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