Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/123456789/3303
Title: Photophysics of doped Semiconductor quantum dots: A path towards new optoelectronic materials
Authors: Viswanatha, Ranjani
Mondal, Payel
Keywords: Quantum dots
Semiconductor
Optoelectronic materials
Issue Date: Jun-2022
Publisher: Jawaharlal Nehru Centre for Advanced Scientific Research
Citation: Mondal, Payel. 2022, Photophysics of doped Semiconductor quantum dots: A path towards new optoelectronic materials, Ph.D thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru
Abstract: Controlled incorporation of a few impurity atoms/ions, especially transition metal ions into semiconductor quantum dots (QDs) impart many interesting properties that play a major role in making the semiconductor industry more versatile. The effect of doping becomes further pronounced due to the strong quantum confinement effect and high surface-to-volume ratio in QD materials. However, the lack of a few fundamental yet very significant aspects has been the major bottleneck in the development of these materials for practical applications. In this thesis, we studied various singly doped QDs to elucidate the unresolved problems related to their fundamental photo-physics. We also synthetically engineered a few dual-doped QD systems and studied their interesting photo-physics.
Description: Open access
URI: https://libjncir.jncasr.ac.in/xmlui/handle/123456789/3303
Appears in Collections:Student Theses (NCU)

Files in This Item:
File Description SizeFormat 
9893.pdf15.84 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.