A kinetically controlled two-step growth process for the formation of an array of dislocation free high mobility InN nanorods (NRs) on GaN nanowall network (NWN) by Molecular Beam Epitaxy is demonstrated here. The epitaxial ...

We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical ...