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Browsing Research Articles (Shivaprasad, S. M.) by Issue Date

Browsing Research Articles (Shivaprasad, S. M.) by Issue Date

Now showing items 1-20 of 23

Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

Kumar, Praveen; Kumar, Mahesh; Noetzel, R.; Shivaprasad, S. M. (Elsevier Science Sa, 2014)

We present the surface modification of Si(111) into silicon nitride by exposure to energetic N-2(+) ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N-2(+) ions to form silicon ...
Pd nanoparticle concentration dependent self-assembly of Pd@SiO2 nanoparticles into leaching resistant microcubes

Datta, Abheek; Sadhu, Anustup; Santra, Subhankar; Shivaprasad, S. M.; Mandal, Swadhin K.; Bhattacharyya, Sayan (Royal Society of Chemistry, 2014)

Pd NP concentration guided the self-assembly of core-shell Pd@SiO2 nanoparticles (NPs) into microcubes. The Pd NPs were stacked by molten dodecyltrimethylammonium bromide (DTAB) to create the SiO2 envelope. The microcubes ...
Multifunctional and robust covalent organic framework-nanoparticle hybrids

Pachfule, Pradip; Panda, Manas K.; Kandambeth, Sharath; Shivaprasad, S. M.; Diaz Diaz, David; Banerjee, Rahul (Royal Society of Chemistry, 2014)

Highly dispersed Pd(0) nanoparticles were successfully immobilized into a stable, crystalline and porous covalent organic framework (COF), TpPa-1, by a solution infiltration method using NABH(4) as a reducing agent. High ...
Surface nitridation induced AlN nano-columnar growth on c-sapphire

Shetty, Satish; Ghatak, Jay; Shivaprasad, S. M. (Pergamon-Elsevier Science Ltd, 2014)

We probe the parametric dependence of the nitridation mechanism of Al2O3 surface by radio frequency nitrogen plasma in a molecular beam epitaxy system. Our quantitative analysis by XPS and RHEED shows that the chemical ...
Role of AlN intermediate layer in the morphological evolution of GaN nanorods grown on c-plane sapphire

Shetty, Satish; Ghatak, Jay; Shivaprasad, S. M. (Royal Society of Chemistry, 2014)

The difference in the evolution of dislocation mediated low-dimensional GaN nanostructures on differently pre-nitrided c-plane sapphire surfaces is demonstrated. We show that GaN growth on c-plane sapphire, after forming ...
Ion induced compositional changes and nanodroplet formation on GaN surface

Venugopal, Vinay; Upadhyaya, Kishor; Kumar, Kishore; Shivaprasad, S. M. (Elsevier Science Bv, 2014)

Low energy argon ion bombardment of different fluence onto a GaN film grown on Al2O3 (0 0 0 1) surface induces interesting compositional and morphological modifications. While atomic force microscopy (AFM) studies reveal ...
Spontaneous growth of InxGa1-xN nanostructures directly on c-plane sapphire by plasma assisted molecular beam epitaxy

De, Arpan; Nagaraja, K. K.; Tangi, Malleswararao; Shivaprasad, S. M. (IoP Publishing Ltd, 2014)

Effect of growth temperature on the morphology, structural and optical properties of InxGa1-xN layers grown under nitrogen-rich conditions, by plasma assisted molecular beam epitaxy, on c-plane Sapphire have been studied. ...
Efficient Plasmonic Dye-Sensitized Solar Cells with Fluorescent Au-Encapsulated C-Dots

Narayanan, Remya; Deepa, Melepurath; Srivastava, Avanish Kumar; Shivaprasad, S. M. (Wiley-V C H Verlag Gmbh, 2014)

A simple strategy to improve the efficiency of a ZnO-nanorod-based dye-sensitized solar cell (DSSC) by use of Au-encapsulated carbon dots (Au@C-dots) in the photoanode is presented. The localized surface plasmonic resonance ...
Role of quantum confinement in giving rise to high electron mobility in GaN nanowall networks

Bhasker, H. P.; Thakur, Varun; Shivaprasad, S. M.; Dhar, S. (Pergamon-Elsevier Science Ltd, 2015)

Origin of unprecedentedly high electron mobility observed in the c-axis oriented GaN nanowall networks is investigated by studying the depth distribution of structural, electrical and optical properties of several such ...
Enhanced Hydrogenation Properties of Size Selected Pd-C Core-Shell Nanoparticles; Effect of Carbon Shell Thickness

Singh, Vinod; Mehta, Bodh R.; Sengar, Saurabh K.; Kulriya, Pawan K.; Khan, Saif A.; Shivaprasad, Sonnada M. (American Chemical Society, 2015)

Effect of nanoparticle size and alloying has been well studied in Pd and Pd alloy nanoparticles and explained on the basis of modifications in the crystal structure and Pd 4d binding energy position. In the present study, ...
Pre-nitridation induced In incorporation in InxGa1-xN nanorods on Si(111) grown by molecular beam epitaxy

De, Arpan; Tangi, Malleswararao; Shivaprasad, S. M. (American Institute of Physics, 2015)

We address the issue of obtaining high quality green emitting InGaN nanorods without any phase separation. Role of pre-nitridation of the Si(111) substrate and growth, temperature on the morphology, structural and optical ...
A WO3-poly(butyl viologen) layer-by-layer film/ruthenium purple film based electrochromic device switching by 1 volt application

Sydam, Rambabu; Deepa, Melepurath; Shivaprasad, S. M.; Srivastava, A. K. (Elsevier Science Bv, 2015)

A layer-by-layer (LbL) assembly of poly(butyl viologen) (PBV) and poly(peroxotungstate) was used for preparing a cathodically coloring dual electrochrome WO3-PBV film. A new formulation containing ferrocenecarboxaldehyde ...
Electronic structure of GaN nanowall network analysed by XPS

Thakur, Varun; Shivaprasad, S. M. (Elsevier Science Bv, 2015)

This work examines the changes in bonding of GaN nanowall network samples with varying morphology grown by rf-plasma assisted molecular beam epitaxy system. X-ray photoelectron spectroscopy is employed to study the valence ...
Quantum coherence of electrons in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Bhasker, H. P.; Thakur, Varun; Shivaprasad, S. M.; Dhar, S. (IOP Publishing Ltd, 2015)

The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for c-axis oriented GaN nanowall network samples grown with different average wall-widths (t(av)) ...
Surface Modification Induced Photoluminescence Enhancement of GaN Nanowall Network Grown on c-Sapphire

Thakur, Varun; Nayak, Sanjay Kumar; Nagaraja, Kodihalli Keeriti; Shivaprasad, S. M. (The Korean Institute of Metals and Materials, 2015)

Surface nitridation of the c-sapphire substrate is used to improve the optical and structural quality of a GaN nanowall network film grown by plasma assisted molecular beam epitaxy. The nitridation results in the formation ...
Epitaxy, phase separation and band-edge emission of spontaneously formed InGaN nanorods

De, Arpan; Shivaprasad, S. M. (IoP Publishing Ltd, 2016)

An In-flux dependent study of the nature of epitaxy, compositional phase separation and band-edge emission of spontaneously formed c-oriented InGaN nanorods on c-sapphire is performed. At higher In flux-rates, m-faceted ...
Formation of low-dimensional GaN on trenched Si(5512), probed by STM and XPS

Kumar, Mahesh; Kumar, Praveen; Devi, Pooja; Shivaprasad, S. M. (IoP Publishing Ltd, 2016)

We report the formation of self-assembled nanostructures of GaN, with controlled size and shape on the trenched planar Si (5 512) surface. Adsorbing low coverages of Ga on Si (55 12) forms 1D arrays of Ga adatoms. The Ga ...
Extensive Parallelism between Crystal Parameters and Magnetic Phase Transitions of Unusually Ferromagnetic Praseodymium Manganite Nanoparticles

Sadhu, Anustup; Salunke, Hemant G.; Shivaprasad, S. M.; Bhattacharyya, Sayan (American Chemical Society, 2016)

The alterations in physical property across different space groups of the same material are sometimes conveniently reflected reflected by the crystal structure as a function of temperature. However, mirroring the physical ...
Polarization induced two dimensional confinement of carriers in wedge shaped polar semiconductors

Deb, S.; Bhasker, H. P.; Thakur, Varun; Shivaprasad, S. M.; Dhar, S. (Nature Publishing Group, 2016)

A novel route to achieve two dimensional (2D) carrier confinement in a wedge shaped wall structure made of a polar semiconductor has been demonstrated theoretically. Tapering of the wall along the direction of the spontaneous ...
Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

Shetty, Satish; Shivaprasad, S. M. (American Institute Physics, 2016)

We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray ...

Now showing items 1-20 of 23

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