Low energy argon ion bombardment of different fluence onto a GaN film grown on Al2O3 (0 0 0 1) surface induces interesting compositional and morphological modifications. While atomic force microscopy (AFM) studies reveal ...

The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for c-axis oriented GaN nanowall network samples grown with different average wall-widths (t(av)) ...