dc.contributor.author |
Thakur, Varun
|
|
dc.contributor.author |
Nayak, Sanjay Kumar
|
|
dc.contributor.author |
Nagaraja, Kodihalli Keeriti
|
|
dc.contributor.author |
Shivaprasad, S. M.
|
|
dc.date.accessioned |
2016-12-22T10:22:33Z |
|
dc.date.available |
2016-12-22T10:22:33Z |
|
dc.date.issued |
2015 |
|
dc.identifier.citation |
Electronic Materials Letters |
en_US |
dc.identifier.citation |
11 |
en_US |
dc.identifier.citation |
3 |
en_US |
dc.identifier.citation |
Thakur, V.; Nayak, S. K.; Nagaraja, K. K.; Shivaprasad, S. M., Surface Modification Induced Photoluminescence Enhancement of GaN Nanowall Network Grown on c-Sapphire. Electronic Materials Letters 2015, 11 (3), 398-403. |
en_US |
dc.identifier.issn |
1738-8090 |
|
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/1948 |
|
dc.description |
Restricted access |
en_US |
dc.description.abstract |
Surface nitridation of the c-sapphire substrate is used to improve the optical and structural quality of a GaN nanowall network film grown by plasma assisted molecular beam epitaxy. The nitridation results in the formation of a thin AN layer on the sapphire surface. Several in-situ and ex-situ characterization are complementarily used to probe the changes in epitaxial growth, band edge emission and strain in the films. The GaN nanowall network layer formed on the pre-nitrided substrate shows a two order higher intensity of band edge luminescence than that of a GaN epilayer, demonstrating its potential for light-emission applications. |
en_US |
dc.description.uri |
2093-6788 |
en_US |
dc.description.uri |
http://dx.doi.org/10.1007/s13391-015-4388-3 |
en_US |
dc.language.iso |
English |
en_US |
dc.publisher |
The Korean Institute of Metals and Materials |
en_US |
dc.rights |
?The Korean Institute of Metals and Materials, 2015 |
en_US |
dc.subject |
Materials Science |
en_US |
dc.subject |
GaN |
en_US |
dc.subject |
nanostructures |
en_US |
dc.subject |
nitridation |
en_US |
dc.subject |
MBE |
en_US |
dc.subject |
photoluminescence |
en_US |
dc.subject |
Molecular-Beam Epitaxy |
en_US |
dc.subject |
Raman-Scattering |
en_US |
dc.subject |
Nanowires |
en_US |
dc.subject |
Substrate |
en_US |
dc.subject |
Nitridation |
en_US |
dc.subject |
Junctions |
en_US |
dc.subject |
Film |
en_US |
dc.title |
Surface Modification Induced Photoluminescence Enhancement of GaN Nanowall Network Grown on c-Sapphire |
en_US |
dc.type |
Article |
en_US |