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Surface Modification Induced Photoluminescence Enhancement of GaN Nanowall Network Grown on c-Sapphire

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dc.contributor.author Thakur, Varun
dc.contributor.author Nayak, Sanjay Kumar
dc.contributor.author Nagaraja, Kodihalli Keeriti
dc.contributor.author Shivaprasad, S. M.
dc.date.accessioned 2016-12-22T10:22:33Z
dc.date.available 2016-12-22T10:22:33Z
dc.date.issued 2015
dc.identifier.citation Electronic Materials Letters en_US
dc.identifier.citation 11 en_US
dc.identifier.citation 3 en_US
dc.identifier.citation Thakur, V.; Nayak, S. K.; Nagaraja, K. K.; Shivaprasad, S. M., Surface Modification Induced Photoluminescence Enhancement of GaN Nanowall Network Grown on c-Sapphire. Electronic Materials Letters 2015, 11 (3), 398-403. en_US
dc.identifier.issn 1738-8090
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/1948
dc.description Restricted access en_US
dc.description.abstract Surface nitridation of the c-sapphire substrate is used to improve the optical and structural quality of a GaN nanowall network film grown by plasma assisted molecular beam epitaxy. The nitridation results in the formation of a thin AN layer on the sapphire surface. Several in-situ and ex-situ characterization are complementarily used to probe the changes in epitaxial growth, band edge emission and strain in the films. The GaN nanowall network layer formed on the pre-nitrided substrate shows a two order higher intensity of band edge luminescence than that of a GaN epilayer, demonstrating its potential for light-emission applications. en_US
dc.description.uri 2093-6788 en_US
dc.description.uri http://dx.doi.org/10.1007/s13391-015-4388-3 en_US
dc.language.iso English en_US
dc.publisher The Korean Institute of Metals and Materials en_US
dc.rights ?The Korean Institute of Metals and Materials, 2015 en_US
dc.subject Materials Science en_US
dc.subject GaN en_US
dc.subject nanostructures en_US
dc.subject nitridation en_US
dc.subject MBE en_US
dc.subject photoluminescence en_US
dc.subject Molecular-Beam Epitaxy en_US
dc.subject Raman-Scattering en_US
dc.subject Nanowires en_US
dc.subject Substrate en_US
dc.subject Nitridation en_US
dc.subject Junctions en_US
dc.subject Film en_US
dc.title Surface Modification Induced Photoluminescence Enhancement of GaN Nanowall Network Grown on c-Sapphire en_US
dc.type Article en_US


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