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Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment

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dc.contributor.author Shetty, Satish
dc.contributor.author Shivaprasad, S. M.
dc.date.accessioned 2017-01-24T06:53:01Z
dc.date.available 2017-01-24T06:53:01Z
dc.date.issued 2016
dc.identifier.citation Shetty, S.; Shivaprasad, S. M., Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment. Journal of Applied Physics 2016, 119 (5), 6 http://dx.doi.org/10.1063/1.4941102 en_US
dc.identifier.citation Journal of Applied Physics en_US
dc.identifier.citation 119 en_US
dc.identifier.citation 5 en_US
dc.identifier.issn 0021-8979
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/2284
dc.description Restricted Access en_US
dc.description.abstract We report here a systematic study of the nitridation of the Si (111) surface by nitrogen plasma exposure. The surface and interface chemical composition and surface morphology are investigated by using RHEED, X-ray photoelectron spectroscopy, and atomic force microscopy (AFM). At the initial stage of nitridation two superstructures-"8 x 8" and "8/3 x 8/3"-form, and further nitridation leads to 1 x 1 stoichiometric silicon nitride. The interface is seen to have the Si1+ and Si3+ states of silicon bonding with nitrogen, which suggests an atomically abrupt and defect-free interface. The initial single crystalline silicon nitride layers are seen to become amorphous at higher thicknesses. The AFM image shows that the nitride nucleates at interfacial dislocations that are connected by sub-stoichiometric 2D-nitride layers, which agglomerate to form thick overlayers. The electrical properties of the interface yield a valence band offset that saturates at 1.9 eV and conduction band offset at 2.3 eV due to the evolution of the sub-stoichiometric interface and band bending. (C) 2016 AIP Publishing LLC. en_US
dc.description.uri 1089-7550 en_US
dc.description.uri http://dx.doi.org/10.1063/1.4941102 en_US
dc.language.iso English en_US
dc.publisher American Institute Physics en_US
dc.rights @American Institute Physics, 2016 en_US
dc.subject Physics en_US
dc.subject Chemical-Vapor-Deposition en_US
dc.subject Multiple-Quantum Wells en_US
dc.subject Si(111) Surface en_US
dc.subject Gan en_US
dc.subject Nitrogen en_US
dc.subject Silicon en_US
dc.subject Substrate en_US
dc.subject Growth en_US
dc.title Early stages of plasma induced nitridation of Si (111) surface and study of interfacial band alignment en_US
dc.type Article en_US


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