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Formation of low-dimensional GaN on trenched Si(5512), probed by STM and XPS

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dc.contributor.author Kumar, Mahesh
dc.contributor.author Kumar, Praveen
dc.contributor.author Devi, Pooja
dc.contributor.author Shivaprasad, S. M.
dc.date.accessioned 2017-01-24T06:53:02Z
dc.date.available 2017-01-24T06:53:02Z
dc.date.issued 2016
dc.identifier.citation Kumar, M.; Kumar, P.; Devi, P.; Shivaprasad, S. M., Formation of low-dimensional GaN on trenched Si(5512), probed by STM and XPS. Materials Research Express 2016, 3 (3), 5 http://dx.doi.org/10.1088/2053-1591/3/3/035010 en_US
dc.identifier.citation Materials Research Express en_US
dc.identifier.citation 3 en_US
dc.identifier.citation 3 en_US
dc.identifier.issn 2053-1591
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/2288
dc.description Restricted Access en_US
dc.description.abstract We report the formation of self-assembled nanostructures of GaN, with controlled size and shape on the trenched planar Si (5 512) surface. Adsorbing low coverages of Ga on Si (55 12) forms 1D arrays of Ga adatoms. The Ga adsorbed Si surface is annealed to 300 degrees C, which results in the formation of Ga 2D nanoparticles (NPs). These Ga NPs were exposed to various fluence of energetic 2 keV N-2(+) ions followed by annealing which yields GaN nanostructures self-assembled along the <(1) over bar 10 > direction. These studies were performed in ultrahigh vacuum using in situ scanning tunneling microscopy and ex situ x-ray photoelectron spectroscopy, to observe the structural and chemical evolution of the interface. en_US
dc.description.uri http://dx.doi.org/10.1088/2053-1591/3/3/035010 en_US
dc.language.iso English en_US
dc.publisher IoP Publishing Ltd en_US
dc.rights @IoP Publishing Ltd, 2016 en_US
dc.subject Materials Science en_US
dc.subject self-assembled en_US
dc.subject GaN en_US
dc.subject XPS en_US
dc.subject STM en_US
dc.subject Superstructural Phase-Diagram en_US
dc.subject Molecular-Beam Epitaxy en_US
dc.subject Semiconductor Nanostructures en_US
dc.subject Reconstructed Surface en_US
dc.subject Quantum en_US
dc.subject Adsorption en_US
dc.subject Silicon en_US
dc.subject Growth en_US
dc.title Formation of low-dimensional GaN on trenched Si(5512), probed by STM and XPS en_US
dc.type Article en_US


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