Study of ZnO nanocrystals with different oxygen vacancy concentrations using high resolution electron energy loss spectroscopy

Abstract

This thesis consists of 3 chapters describing the study of ZnO semiconductor nanocrystals with high resolution electron energy loss spectroscopy (HR-EELS ) ina FEI TITAN 3TM 80- 300 kV transmission electron microscope. Chapter 1 describes a brief introduction to ZnO semiconductor, its device appli cation, native point defects and defect properties. It also gives a s hort introduction the technique – High resolution electron energy loss spectroscopy. Chapter 2 describes briefly the experimental and simulation techniques us ed in the presented work. This chapter has 2 sections. 2.1 describes expe rimental methods and 2.2 describes simulation methods. Chapter 3 describes high resolution electron energy loss spectroscopy s tudy on ZnO nanocrystals with different oxygen vacancy concentration. HR-EELS e xperiment was done using a FEI TITAN 3TM 80-300kV transmission electron microscope and variation in pre-edge features in the core-ionization edges were observed and was com pared with theoretical ELNES calculations done by DFT using WIEN2k cod

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