This thesis consists of 3 chapters describing the study of ZnO
semiconductor nanocrystals
with high resolution electron energy loss spectroscopy (HR-EELS
) ina FEI TITAN
3TM
80-
300 kV transmission electron microscope.
Chapter 1
describes a brief introduction to ZnO semiconductor, its device appli
cation,
native point defects and defect properties. It also gives a s
hort introduction the technique –
High resolution electron energy loss spectroscopy.
Chapter 2
describes briefly the experimental and simulation techniques us
ed in the
presented work. This chapter has 2 sections. 2.1 describes expe
rimental methods and 2.2
describes simulation methods.
Chapter 3
describes high resolution electron energy loss spectroscopy s
tudy on ZnO
nanocrystals with different oxygen vacancy concentration. HR-EELS e
xperiment was done
using a FEI TITAN
3TM
80-300kV transmission electron microscope and variation in pre-edge
features in the core-ionization edges were observed and was com
pared with theoretical
ELNES calculations done by DFT using WIEN2k cod
Abstract not available
