Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/2101
Title: Electronic structure and properties of layered gallium telluride
Authors: Shenoy, U. Sandhya
Gupta, Uttam
Narang, Deepa S.
Late, Dattatray J.
Waghmare, Umesh V.
Rao, C. N. R.
Keywords: Chemistry
Physics
Single-Crystalline
Optical-Properties
Graphene Analogs
Photodetectors
Transistors
Nanosheets
Gas
Selenide
Growth
Energy
Issue Date: 2016
Publisher: Elsevier Science Bv
Citation: Shenoy, U. S.; Gupta, U.; Narang, D. S.; Late, D. J.; Waghmare, U. V.; Rao, C. N. R., Electronic structure and properties of layered gallium telluride. Chemical Physics Letters 2016, 651, 148-154 http://dx.doi.org/10.1016/j.cplett.2016.03.045
Chemical Physics Letters
651
Abstract: Layer-dependent electronic structure and properties of gallium monochalcogenides, GaX where X=S, Se, Te, have been investigated using first-principles calculations based on various functionals, with a motivation to assess their use in photocatalytic water splitting. Since hydrogen evolution by water splitting using visible light provides a promising way for solar energy conversion, both theoretical and experimental studies have been carried out on the photochemical hydrogen evolution by GaTe. We also present the Raman spectra of GaTe examined by both theory and experiment. (C) 2016 Elsevier B.V. All rights reserved.
Description: Restricted Access
URI: https://libjncir.jncasr.ac.in/xmlui/10572/2101
ISSN: 0009-2614
Appears in Collections:Research Articles (Umesh V. Waghmare)
Research Papers (Prof. C.N.R. Rao)

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