Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/233
Title: Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures
Authors: Biswas, Kanishka
Sardar, Kripasindhu
Rao, C N R
Keywords: Molecular-Beam-Epitaxy
Semiconductors
(Ga,Mn)N
Origin
Films
Issue Date: 25-Aug-2006
Publisher: American Institute of Physics
Citation: Applied Physics Letters 89(13), 132503 (2006)
Abstract: 3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350 degrees C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (T-C) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials. (c) 2006 American Institute of Physics.
URI: https://libjncir.jncasr.ac.in/xmlui/10572/233
Other Identifiers: 0003-6951
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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