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Title: | Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures |
Authors: | Biswas, Kanishka Sardar, Kripasindhu Rao, C N R |
Keywords: | Molecular-Beam-Epitaxy Semiconductors (Ga,Mn)N Origin Films |
Issue Date: | 25-Aug-2006 |
Publisher: | American Institute of Physics |
Citation: | Applied Physics Letters 89(13), 132503 (2006) |
Abstract: | 3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350 degrees C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (T-C) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials. (c) 2006 American Institute of Physics. |
URI: | https://libjncir.jncasr.ac.in/xmlui/10572/233 |
Other Identifiers: | 0003-6951 |
Appears in Collections: | Research Papers (Prof. C.N.R. Rao) |
Files in This Item:
File | Description | Size | Format | |
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Sl. No. 26 2006 Applied Physic Letters 89 !13) 132503 -.pdf | 279.34 kB | Adobe PDF | View/Open |
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