Experimental and theoretical investigations on GaN nanowall network

Abstract

This chapter gives a detailed account of group III nitride family, with special focus on Gallium Nitride (GaN) in terM.S. of its fundamental properties and promising applications. Literature background that highlights the challenges in GaN research, limitation to their applications and how these challenges can be addressed in the various nanostructures is discussed. This chapter concludes by presenting the scope and organization of the thesis. 1.1 Group III-nitrides (Al/Ga/In)-N compounds namely AlN, GaN and InN constitute the group III nitride family. These wide bandgap materials posses several remarkable properties that make them particularly attractive for reliable solid state device applications. They have low dielectric constants with high thermal conductivity pathways, exhibit fairly high bond strengths and very high melting temperatures [1-3]. The large bond strengths could possibly inhibit dislocation motion and improve reliability in comparison to other II-VI and III-V materials [1]. In addition, the group III-nitrides are resistant to chemical etching and hence should allow GaN-based devices to be operated in harsh environments [4, 5]. These properties may lead to devices with superior reliability.