Pressure induced electronic topological transition from band to topological insulator in Sb2Se3

Abstract

Every material consists of electrons and ions. Microscopic investigations of various macroscopic properties of a material reveal that most of the properties arise due to the interaction between the electrons and the ions and the interaction among theM.S.elves. The behavior of these atomic and subatomic particles can best be described by quantum theory very accurately. This revolutionary theory, which evolved in the beginning of the twentieth century to explain the hidden nature of an atom, was successfully applied to many probleM.S. in physics. The most successful example being the explanation of fine structure splitting of the spectral lines of H atom. With the help of quantum theory, the experimental results for the fine structure constant was reproduced very accurately [1]. The success of quantum theory leads scientist to apply it in solid state physics to explain and predict various physical properties of a material.