Experimental and first-principles theoretical investigations of the growth and properties of pristine and magnesium doped GaN nanostructures

Abstract

This chapter describes some of the fundamental aspects of III-nitride compound semi- conductors, which make these materials technologically important for various applications. The crystal structure and chemical nature of the III-nitrides are presented briefly. Crit- ical limitations and difficulties such as unavailability of large native substrates and its consequences are also discussed. Finally, mechanisM.S. of the formation of island and its nucleation that determine thin film growth are described.