Negative differential resistance in GaN nanocrystals above room temperature

Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/408

Title:	Negative differential resistance in GaN nanocrystals above room temperature
Authors:	Chitara, Basant Jebakumar, D S Ivan Rao, C N R Krupanidhi, S B
Keywords:	Monte-Carlo Calculation Gallium Nitride Band Structures Diodes Performance Threshold Route Light Laser
Issue Date:	7-Oct-2009
Publisher:	IOP Publishing Ltd
Citation:	Nanotechnology 20(40), 405205-(1-4) (2009)
Abstract:	Negative differential resistance (NDR) has been observed for the first time above room temperature in gallium nitride nanocrystals synthesized by a simple chemical route. Current-voltage characteristics have been used to investigate this effect through a metal-semiconductor-metal (M-S-M) configuration on SiO2. The NDR effect is reversible and reproducible through many cycles. The threshold voltage is similar to 7 V above room temperature.
Description:	Restricted Access
URI:	https://libjncir.jncasr.ac.in/xmlui/10572/408
Other Identifiers:	0957-4484
Appears in Collections:	Research Papers (Prof. C.N.R. Rao)

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