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https://libjncir.jncasr.ac.in/xmlui/handle/10572/52| Title: | Remarkably low turn-on field emission in undoped, nitrogen-doped, and boron-doped graphene |
| Authors: | Palnitkar, U A Kashid, Ranjit V More, Mahendra A Joag, Dilip S Panchakarla, L S Rao, C N R |
| Keywords: | Boron Doping Field emission Graphene Nanostructured materials Nitrogen Resonant tunnelling Carbon Nanotube Films Electron-Emission Transistors Deposition Nanowires Behavior Wires |
| Issue Date: | 9-Aug-2010 |
| Publisher: | American Institute of Physics |
| Citation: | Applied Physics Letters 97(6), 063102-1-3 (2010) |
| Abstract: | Field emission studies have been carried out on undoped as well as N- and B-doped graphene samples prepared by arc-discharge method in a hydrogen atmosphere. These graphene samples exhibit very low turn-on fields. N-doped graphene shows the lowest turn-on field of 0.6 V/mu m, corresponding to emission current density of 10 mu A/cm(2). These characteristics are superior to the other types of nanomaterials reported in the literature. Furthermore, emission currents are stable over the period of more than 3 h for the graphene samples. The observed emission behavior has been explained on the basis of nanometric features of graphene and resonance tunneling phenomenon. |
| URI: | https://libjncir.jncasr.ac.in/xmlui/10572/52 |
| Other Identifiers: | 0003-6951 |
| Appears in Collections: | Research Papers (Prof. C.N.R. Rao) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Sl.No.20 AIP.pdf | 353.04 kB | Adobe PDF | View/Open |
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