Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/52
Title: Remarkably low turn-on field emission in undoped, nitrogen-doped, and boron-doped graphene
Authors: Palnitkar, U A
Kashid, Ranjit V
More, Mahendra A
Joag, Dilip S
Panchakarla, L S
Rao, C N R
Keywords: Boron
Doping
Field emission
Graphene
Nanostructured materials
Nitrogen
Resonant tunnelling
Carbon Nanotube Films
Electron-Emission
Transistors
Deposition
Nanowires
Behavior
Wires
Issue Date: 9-Aug-2010
Publisher: American Institute of Physics
Citation: Applied Physics Letters 97(6), 063102-1-3 (2010)
Abstract: Field emission studies have been carried out on undoped as well as N- and B-doped graphene samples prepared by arc-discharge method in a hydrogen atmosphere. These graphene samples exhibit very low turn-on fields. N-doped graphene shows the lowest turn-on field of 0.6 V/mu m, corresponding to emission current density of 10 mu A/cm(2). These characteristics are superior to the other types of nanomaterials reported in the literature. Furthermore, emission currents are stable over the period of more than 3 h for the graphene samples. The observed emission behavior has been explained on the basis of nanometric features of graphene and resonance tunneling phenomenon.
URI: https://libjncir.jncasr.ac.in/xmlui/10572/52
Other Identifiers: 0003-6951
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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