Please use this identifier to cite or link to this item:
https://libjncir.jncasr.ac.in/xmlui/handle/10572/65
Title: | GaS and GaSe nanowalls and their transformation to Ga2O3 and GaN nanowalls |
Authors: | Gautam, Ujjal K Vivekchand, S R C Govindaraj, A Rao, C N R |
Keywords: | Carbon Nanowalls Nanosheets Nanostructures Growth |
Issue Date: | 2005 |
Publisher: | The Royal Society of Chemistry |
Citation: | Chemical Communications (31), 3995-3997 (2005) |
Abstract: | Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity. |
Description: | Restricted access |
URI: | https://libjncir.jncasr.ac.in/xmlui/10572/65 |
Other Identifiers: | 1359-7345 |
Appears in Collections: | Research Papers (Prof. C.N.R. Rao) |
Files in This Item:
File | Description | Size | Format | |
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2005 Chem.Commun., 3995.pdf Restricted Access | 480.52 kB | Adobe PDF | View/Open Request a copy |
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